Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of flash E2PROM devices

dc.contributor.author	De Blauwe, Jan
dc.contributor.author	Wellekens, Dirk
dc.contributor.author	Van Houdt, Jan
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Haspeslagh, Luc
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	Maes, Herman
dc.contributor.imecauthor	Wellekens, Dirk
dc.contributor.imecauthor	Van Houdt, Jan
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Haspeslagh, Luc
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Van Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned	2021-09-30T08:04:04Z
dc.date.available	2021-09-30T08:04:04Z
dc.date.embargo	9999-12-31
dc.date.issued	1997
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1800
dc.source.beginpage	301
dc.source.endpage	304
dc.source.journal	Microelectronic Engineering
dc.source.volume	36
dc.title	Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of flash E2PROM devices
dc.type	Journal article
dspace.entity.type	Publication
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