Single defect studies by means of random telegraph signals in submicron silicon MOSFETs

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Lukyanchikova, N. B.
dc.contributor.author	Petrichuk, M. V.
dc.contributor.author	Garbar, N. P.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-14T11:39:14Z
dc.date.available	2021-10-14T11:39:14Z
dc.date.embargo	9999-12-31
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3829
dc.source.beginpage	467
dc.source.conference	Proceedings of the 8th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST
dc.source.conferencedate	25/09/1999
dc.source.conferencelocation	Höör Sweden
dc.source.endpage	472
dc.title	Single defect studies by means of random telegraph signals in submicron silicon MOSFETs
dc.type	Proceedings paper
dspace.entity.type	Publication
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