Publication:

TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

Date

2010
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorNorris, D.J.
dc.contributor.authorRoss, I.M.
dc.contributor.authorCullis, A.G.
dc.contributor.authorWalther, T.
dc.contributor.authorMyronov, M.
dc.contributor.authorDobbie, A.
dc.contributor.authorWhall, T.
dc.contributor.authorParker, E.H.C.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLee, Willie
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T19:40:23Z
dc.date.available2021-10-18T19:40:23Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn1742-6588
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17709
dc.source.beginpage12044
dc.source.issue1
dc.source.journalJournal of Physics Conference Series
dc.source.volume241
dc.title

TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
21430.pdf
Size:
883.13 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles