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Schottky barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs
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Schottky barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETs
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Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lousberg, Gregory
;
Yu, HongYu
;
Froment, Benoit
;
Augendre, Emmanuel
;
De Keersgieter, An
;
Lauwers, Anne
;
Li, M.F.
;
Absil, Philippe
;
Jurczak, Gosia
;
Biesemans, Serge
Journal
IEEE Electron Device Letters
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1934
since deposited on 2021-10-16
1
last month
Acq. date: 2025-12-10
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Metrics
Views
1934
since deposited on 2021-10-16
1
last month
Acq. date: 2025-12-10
Citations