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Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
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Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
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Date
2007
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Van Dal, Mark
;
Collaert, Nadine
;
Doornbos, Gerben
;
Vellianitis, Georgios
;
Curatola, Gilberto
;
Pawlak, Bartek
;
Duffy, Ray
;
Jonville, Carole
;
Degroote, Bart
;
Altamirano Sanchez, Efrain
;
Kunnen, Eddy
;
Demand, Marc
;
Beckx, Stephan
;
Vandeweyer, Tom
;
Delvaux, Christie
;
Leys, Frederik
;
Hikavyy, Andriy
;
Rooyackers, Rita
;
Kaiser, M.
;
Weemaes, R.G.R.
;
Biesemans, Serge
;
Jurczak, Gosia
;
Kottantharayil, Anil
;
Witters, Liesbeth
;
Lander, Rob
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1964
since deposited on 2021-10-16
3
last month
1
last week
Acq. date: 2026-01-09
Citations
Metrics
Views
1964
since deposited on 2021-10-16
3
last month
1
last week
Acq. date: 2026-01-09
Citations