Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid

dc.contributor.author	Matovu, John B.
dc.contributor.author	Ong, Patrick
dc.contributor.author	Teugels, Lieve
dc.contributor.author	Leunissen, Peter
dc.contributor.author	Babu, S. V.
dc.contributor.imecauthor	Ong, Patrick
dc.contributor.imecauthor	Teugels, Lieve
dc.contributor.orcidimec	Ong, Patrick::0000-0002-2072-292X
dc.contributor.orcidimec	Teugels, Lieve::0000-0002-6613-9414
dc.date.accessioned	2021-10-22T03:38:47Z
dc.date.available	2021-10-22T03:38:47Z
dc.date.issued	2014
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24228
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0167931713006849
dc.source.beginpage	17
dc.source.endpage	21
dc.source.journal	Microelectronic Engineering
dc.source.volume	116
dc.title	Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid
dc.type	Journal article
dspace.entity.type	Publication
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