Publication:

Selective removal of Ni for salicidation and fully silicided gates

Date

2005
Proceedings Paper
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dc.contributor.authorKraus, K.
dc.contributor.authorFano Leston, V.
dc.contributor.authorSnow, Jim
dc.contributor.authorXu, Kaidong
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorLauwers, Anne
dc.contributor.authorMertens, Paul
dc.contributor.authorKovacs, F.
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorMertens, Paul
dc.date.accessioned2021-10-16T02:39:39Z
dc.date.available2021-10-16T02:39:39Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10724
dc.source.beginpage67
dc.source.conferenceCleaning Technology in Semiconductor Device Manufacturing IX
dc.source.conferencedate16/10/2005
dc.source.conferencelocationLos Angeles, CA USA
dc.source.endpage74
dc.title

Selective removal of Ni for salicidation and fully silicided gates

dc.typeProceedings paper
dspace.entity.typePublication
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