Publication:
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
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1943 since deposited on 2021-10-23
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Acq. date: 2026-01-26
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1943 since deposited on 2021-10-23
2last month
1last week
Acq. date: 2026-01-26
Citations