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Impact of gate material on low-frequency noise of n-MOSFETs with 1.5 nm SiON gate dielectric: testing the limits of the number fluctuations theory
Publication:
Impact of gate material on low-frequency noise of n-MOSFETs with 1.5 nm SiON gate dielectric: testing the limits of the number fluctuations theory
Date
2005
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Srinivasan, Purushothaman
;
Simoen, Eddy
;
Pantisano, Luigi
;
Claeys, Cor
;
Misra, D.
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Abstract
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1847
since deposited on 2021-10-16
Acq. date: 2025-10-24
Citations
Metrics
Views
1847
since deposited on 2021-10-16
Acq. date: 2025-10-24
Citations