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High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed

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dc.contributor.authorDruais, Gael
dc.contributor.authorDilliway, G.
dc.contributor.authorFischer, P.
dc.contributor.authorGuidotti, E.
dc.contributor.authorLuhn, Ole
dc.contributor.authorRadisic, Alex
dc.contributor.authorZahraoui, S.
dc.contributor.imecauthorRadisic, Alex
dc.date.accessioned2021-10-17T06:57:17Z
dc.date.available2021-10-17T06:57:17Z
dc.date.issued2008
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13677
dc.source.beginpage1957
dc.source.endpage1961
dc.source.issue10
dc.source.journalMicroelectronic Engineering
dc.source.volume85
dc.title

High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed

dc.typeJournal article
dspace.entity.typePublication
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