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A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradation
Publication:
A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradation
Date
2001
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Dreesen, R.
;
Croes, Kris
;
Manca, Jean
;
De Ceuninck, Ward
;
De Schepper, Luc
;
Pergoot, A.
;
Groeseneken, Guido
Journal
Microelectronics Reliability
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2001
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
2001
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations