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A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradation

Date

2001
Journal article
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dc.contributor.authorDreesen, R.
dc.contributor.authorCroes, Kris
dc.contributor.authorManca, Jean
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorDe Schepper, Luc
dc.contributor.authorPergoot, A.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-14T16:53:12Z
dc.date.available2021-10-14T16:53:12Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5268
dc.source.beginpage437
dc.source.endpage443
dc.source.issue3
dc.source.journalMicroelectronics Reliability
dc.source.volume41
dc.title

A new degradation model and lifetime extrapolation technique for lightly doped drain NMOSFETs under hot-carrier degradation

dc.typeJournal article
dspace.entity.typePublication
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