Publication:

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Date

2021
Journal Article Review
https://doi.org/10.3390/ma14092316
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dc.contributor.authorMukherjee, Kalparupa
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorBorga, Matteo
dc.contributor.authorGeens, Karen
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorDiehle, Patrick
dc.contributor.authorHuebner, Susanne
dc.contributor.authorAltmann, Frank
dc.contributor.authorBuffolo, Matteo
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidextDe Santi, Carlo::0000-0001-6064-077X
dc.contributor.orcidextBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidextDiehle, Patrick::0000-0003-0608-9889
dc.contributor.orcidextBuffolo, Matteo::0000-0002-9255-6457
dc.contributor.orcidextMeneghesso, Gaudenzio::0000-0002-6715-4827
dc.contributor.orcidextMeneghini, Matteo::0000-0003-2421-505X
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-03-04T13:34:11Z
dc.date.available2022-03-04T13:34:11Z
dc.date.issued2021
dc.identifier.doi10.3390/ma14092316
dc.identifier.issn1996-1944
dc.identifier.pmidMEDLINE:33946943
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39306
dc.publisherMDPI
dc.source.beginpage2316
dc.source.issue9
dc.source.journalMATERIALS
dc.source.numberofpages19
dc.source.volume14
dc.subject.keywordsDYNAMIC-R-ON
dc.subject.keywordsTHRESHOLD VOLTAGE
dc.subject.keywordsN-DIODES
dc.subject.keywordsHOPPING CONDUCTION
dc.subject.keywordsMOSFETS
dc.subject.keywordsMECHANISMS
dc.subject.keywordsSCHOTTKY
dc.subject.keywordsBEHAVIOR
dc.subject.keywordsORIGIN
dc.subject.keywordsHEMTS
dc.title

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

dc.typeJournal article review
dspace.entity.typePublication
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