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Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down >35 V for 3D NAND flash periphery application
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Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down >35 V for 3D NAND flash periphery application
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Date
2024
Journal article
https://doi.org/10.35848/1347-4065/ad2138
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Spessot, Alessio
;
Matagne, Philippe
;
Arimura, Hiroaki
;
Ganguly, Jishnu
;
Ritzenthaler, Romain
;
Bastos, Joao
;
Sarkar, Ritam
;
Capogreco, Elena
;
Chen, Y.
;
Horiguchi, Naoto
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
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96
since deposited on 2024-02-20
Acq. date: 2026-01-10
Citations
Metrics
Views
96
since deposited on 2024-02-20
Acq. date: 2026-01-10
Citations