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Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells

Date

2009
Journal article
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dc.contributor.authorZheng, X.F.
dc.contributor.authorZhang, W.D.
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorZhang, J.F.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-18T05:48:15Z
dc.date.available2021-10-18T05:48:15Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16612
dc.source.beginpage1834
dc.source.endpage1837
dc.source.issue7_9
dc.source.journalMicroelectronic Engineering
dc.source.volume86
dc.title

Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells

dc.typeJournal article
dspace.entity.typePublication
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