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From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

Date

2011
Proceedings Paper
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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGrasser, T.
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-19T19:43:35Z
dc.date.available2021-10-19T19:43:35Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19896
dc.source.beginpage152
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate13/06/2011
dc.source.conferencelocationKyoto Japan
dc.source.endpage153
dc.title

From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

dc.typeProceedings paper
dspace.entity.typePublication
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