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Selective wet removal of Hf-based layers and post-dry etch residues in high-k and metal gate stacks

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dc.contributor.authorClaes, Martine
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBeckx, Stephan
dc.contributor.authorDemand, Marc
dc.contributor.authorDeweerd, Wim
dc.contributor.authorGaraud, Sylvain
dc.contributor.authorKraus, Harald
dc.contributor.authorVos, Rita
dc.contributor.authorSnow, Jim
dc.contributor.authorBoullart, Werner
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T00:58:32Z
dc.date.available2021-10-16T00:58:32Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10231
dc.source.beginpage93
dc.source.conferenceUltra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium
dc.source.conferencedate20/09/2004
dc.source.conferencelocationBrussels Belgium
dc.source.endpage96
dc.title

Selective wet removal of Hf-based layers and post-dry etch residues in high-k and metal gate stacks

dc.typeProceedings paper
dspace.entity.typePublication
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