Publication:

A 50 nm vertical Si0.70/Ge0.30/Si0.85/Ge0.15 pMOSFET with an oxide/nitride gate dielectric

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2151 since deposited on 2021-10-14
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Acq. date: 2025-12-10

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2151 since deposited on 2021-10-14
1last month
1last week
Acq. date: 2025-12-10

Citations