Publication:

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

Date

2012
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJurczak, Gosia
dc.contributor.authorClaeys, Cor
dc.contributor.authorMendes Almeida, Luciano
dc.contributor.authorAndrada, Gloria
dc.contributor.authorLuque Rodrigues, Abraham
dc.contributor.authorJimenez Tejada, Juan Antonio
dc.contributor.authorCaillat, Christian
dc.contributor.authorFazan, Pierre
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorFazan, Pierre
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-20T16:08:45Z
dc.date.available2021-10-20T16:08:45Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21511
dc.source.beginpage338
dc.source.conference42nd European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate17/09/2012
dc.source.conferencelocationBordeaux France
dc.source.endpage341
dc.title

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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