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Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: preparation from gas/solid reaction and downscaling to an area of 0.25 μm²

Date

2005
Proceedings Paper
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dc.contributor.authorMuller, Robert
dc.contributor.authorDe Jonge, Stijn
dc.contributor.authorMyny, Kris
dc.contributor.authorWouters, Dirk
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.contributor.imecauthorMyny, Kris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.accessioned2021-10-16T03:34:37Z
dc.date.available2021-10-16T03:34:37Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10915
dc.source.beginpage261
dc.source.conferenceProceedings of the 35th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2005
dc.source.conferencelocationGrenoble France
dc.source.endpage264
dc.title

Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: preparation from gas/solid reaction and downscaling to an area of 0.25 μm²

dc.typeProceedings paper
dspace.entity.typePublication
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