Publication:

Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions

Date

2016
Proceedings Paper
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dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorHellings, Geert
dc.contributor.authorCho, Moon Ju
dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorLinten, Dimitri
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-23T15:49:50Z
dc.date.available2021-10-23T15:49:50Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27426
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7574535/?tp=&arnumber=7574535
dc.source.beginpage4B.4
dc.source.conferenceIEEE International Reliaability Physics - IRPS
dc.source.conferencedate17/04/2016
dc.source.conferencelocationPasadena, CA USA
dc.title

Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions

dc.typeProceedings paper
dspace.entity.typePublication
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