Publication:

a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm

Date

2023
Proceedings Paper
https://doi.org/10.1109/IPC57732.2023.10360576
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dc.contributor.authorAkritidis, Konstantinos
dc.contributor.authorBillet, Maximilien
dc.contributor.authorSeema Saseendran, Sandeep
dc.contributor.authorPoelman, Stijn
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorNeutens, Pieter
dc.contributor.authorBrouckaert, Joost
dc.contributor.authorVan Dorpe, Pol
dc.contributor.authorKuyken, Bart
dc.contributor.imecauthorAkritidis, Konstantinos
dc.contributor.imecauthorBillet, Maximilien
dc.contributor.imecauthorSeema Saseendran, Sandeep
dc.contributor.imecauthorPoelman, Stijn
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.imecauthorNeutens, Pieter
dc.contributor.imecauthorBrouckaert, Joost
dc.contributor.imecauthorVan Dorpe, Pol
dc.contributor.imecauthorKuyken, Bart
dc.contributor.orcidimecAkritidis, Konstantinos::0000-0001-9586-8424
dc.contributor.orcidimecBillet, Maximilien::0000-0002-3823-6639
dc.contributor.orcidimecSeema Saseendran, Sandeep::0000-0001-8556-0821
dc.contributor.orcidimecPoelman, Stijn::0000-0002-8374-1466
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.contributor.orcidimecNeutens, Pieter::0000-0002-0620-0033
dc.contributor.orcidimecBrouckaert, Joost::0000-0002-0208-3060
dc.contributor.orcidimecVan Dorpe, Pol::0000-0003-0918-1664
dc.date.accessioned2024-03-28T10:34:27Z
dc.date.available2024-03-07T17:40:08Z
dc.date.available2024-03-28T10:34:27Z
dc.date.issued2023
dc.description.wosFundingTextThis work was supported by the European Union's Europe research and innovation programs under agreement 101070622 (CALADAN)
dc.identifier.doi10.1109/IPC57732.2023.10360576
dc.identifier.eisbn979-8-3503-4722-7
dc.identifier.issn2374-0140
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43634
dc.publisherIEEE
dc.source.conferenceAnnual Conference of the IEEE-Photonics-Society (IPC)
dc.source.conferencedateNOV 12-16, 2023
dc.source.conferencelocationOrlando
dc.source.journalN/A
dc.source.numberofpages2
dc.title

a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm

dc.typeProceedings paper
dspace.entity.typePublication
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