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Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications
Publication:
Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications
Date
2008-09
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
O'Sullivan, Barry
;
Mitsuhashi, Riichirou
;
Okawa, Hiroshi
;
Sengoku, Naohisa
;
Schram, Tom
;
Groeseneken, Guido
;
Biesemans, Serge
;
Nakabayashi, Takashi
;
Ikeda, Atsushi
;
Niwa, Masaaki
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1972
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
Metrics
Views
1972
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations