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Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications

Date

2008-09
Proceedings Paper
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dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorOkawa, Hiroshi
dc.contributor.authorSengoku, Naohisa
dc.contributor.authorSchram, Tom
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNakabayashi, Takashi
dc.contributor.authorIkeda, Atsushi
dc.contributor.authorNiwa, Masaaki
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.date.accessioned2021-10-17T09:33:19Z
dc.date.available2021-10-17T09:33:19Z
dc.date.issued2008-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14261
dc.source.beginpage680
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate24/09/2008
dc.source.conferencelocationTsukuba Japan
dc.source.endpage681
dc.title

Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications

dc.typeProceedings paper
dspace.entity.typePublication
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