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TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions
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TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sibaja-Hernandez, Arturo
;
Xu, Mingwei
;
Decoutere, Stefaan
;
Maes, Herman
Journal
Materials Science for Semiconductor Processing
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1903
since deposited on 2021-10-15
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Acq. date: 2025-12-15
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Views
1903
since deposited on 2021-10-15
3
last month
Acq. date: 2025-12-15
Citations