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TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Date

2004
Journal article
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dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorXu, Mingwei
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-15T16:14:37Z
dc.date.available2021-10-15T16:14:37Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9597
dc.source.journalMaterials Science for Semiconductor Processing
dc.title

TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

dc.typeJournal article
dspace.entity.typePublication
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