Publication:

Off-state stress degradation mechanism on advanced p-MOSFETs

Date

2015-06
Proceedings Paper
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dc.contributor.authorCho, Moon Ju
dc.contributor.authorSpessot, Alessio
dc.contributor.authorKaczer, Ben
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorFazan, Pierre
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorFazan, Pierre
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-22T18:41:57Z
dc.date.available2021-10-22T18:41:57Z
dc.date.issued2015-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25079
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7165893
dc.source.beginpage1
dc.source.conferenceInternational Conference on IC Design and Technology - ICICDT
dc.source.conferencedate1/06/2015
dc.source.conferencelocationLeuven Belgium
dc.source.endpage4
dc.title

Off-state stress degradation mechanism on advanced p-MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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