Substrate induced composition change during Ge2/Sb2/Te5 atomic layer deposition and study of initial reactions on SiO2 surface

dc.contributor.author	Sinha, Jyoti
dc.contributor.author	Nyns, Laura
dc.contributor.author	Delabie, Annelies
dc.contributor.imecauthor	Nyns, Laura
dc.contributor.imecauthor	Sinha, Jyoti
dc.contributor.imecauthor	Delabie, Annelies
dc.contributor.orcidimec	Nyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimec	Sinha, Jyoti::0000-0003-4360-7657
dc.contributor.orcidimec	Delabie, Annelies::0000-0001-9739-7419
dc.date.accessioned	2025-03-20T13:24:34Z
dc.date.available	2024-11-24T16:40:05Z
dc.date.available	2025-03-20T13:24:34Z
dc.date.issued	2024
dc.description.wosFundingText	We thank Jerome Innocent, Andrea Illiberi, and Michael Givens from ASM Belgium for the GST process. We also thank Alexis Franquet for TOF-SIMS and Praveen Dara for T-XRF characterization and its interpretation.
dc.identifier.doi	10.1116/6.0003890
dc.identifier.issn	0734-2101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/44835
dc.publisher	A V S AMER INST PHYSICS
dc.source.beginpage	Art. 062412
dc.source.endpage	N/A
dc.source.issue	6
dc.source.journal	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
dc.source.numberofpages	10
dc.source.volume	42
dc.subject.keywords	PHASE-CHANGE MEMORY
dc.subject.keywords	OXIDE
dc.subject.keywords	GROWTH
dc.subject.keywords	FILMS
dc.subject.keywords	GETE
dc.title	Substrate induced composition change during Ge2/Sb2/Te5 atomic layer deposition and study of initial reactions on SiO2 surface
dc.type	Journal article
dspace.entity.type	Publication
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