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Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
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Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
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Date
1999
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Boeve, Hans
;
Bruynseraede, Christophe
;
Das, J.
;
Dessein, Kristof
;
Borghs, Gustaaf
;
De Boeck, Jo
;
Sousa, R. C.
;
Melo, Luis
;
Freitas, P. P.
Journal
IEEE Trans. Magnetics
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1909
since deposited on 2021-10-06
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last month
Acq. date: 2025-12-10
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Metrics
Views
1909
since deposited on 2021-10-06
2
last month
Acq. date: 2025-12-10
Citations