Publication:

Optimizing the read-out bias for the capacitorless 1T bulk FinFET RAM cell

Date

2009
Journal article
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dc.contributor.authorCollaert, Nadine
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorRakowski, Michal
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorDe Wachter, Bart
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorRakowski, Michal
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorDe Wachter, Bart
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T21:39:24Z
dc.date.available2021-10-17T21:39:24Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15124
dc.source.beginpage1377
dc.source.endpage1379
dc.source.issue12
dc.source.journalIEEE Electron Device Letters
dc.source.volume30
dc.title

Optimizing the read-out bias for the capacitorless 1T bulk FinFET RAM cell

dc.typeJournal article
dspace.entity.typePublication
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