Publication:
Role of the GaN-on-Si Epi-Stack on ?R-ON Caused by Back-Gating Stress
| dc.contributor.author | Millesimo, M. | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Valentini, L. | |
| dc.contributor.author | Bakeroot, B. | |
| dc.contributor.author | Posthuma, Niels | |
| dc.contributor.author | Vohra, Anurag | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Fiegna, C. | |
| dc.contributor.author | Tallarico, A. N. | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Posthuma, Niels | |
| dc.contributor.imecauthor | Vohra, Anurag | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
| dc.contributor.orcidimec | Vohra, Anurag::0000-0002-2831-0719 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.date.accessioned | 2023-12-07T11:12:46Z | |
| dc.date.available | 2023-09-23T18:03:45Z | |
| dc.date.available | 2023-12-07T11:12:46Z | |
| dc.date.issued | 2023 | |
| dc.description.wosFundingText | This work was supported in part by Intelligent Reliability 4.0 (iRel40), iRel40is a European co-funded innovation project that has been granted by the Electronics Components and Systems for European Leadership (ECSEL) Joint Undertaking (JU) under Grant 876659; in part by the Horizon 2020 Research Programme and participating countries; and in part by National Funding which is provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, The Netherlands, Slovakia, Spain, Sweden, and Turkey. The review of this article was arranged by Editor W. Saito. | |
| dc.identifier.doi | 10.1109/TED.2023.3304272 | |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/42584 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 5203 | |
| dc.source.endpage | 5209 | |
| dc.source.issue | 10 | |
| dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
| dc.source.numberofpages | 7 | |
| dc.source.volume | 70 | |
| dc.subject.keywords | ALGAN/GAN HEMTS | |
| dc.subject.keywords | NONEXPONENTIAL TRANSIENTS | |
| dc.subject.keywords | CURRENT COLLAPSE | |
| dc.subject.keywords | CARBON | |
| dc.subject.keywords | IMPACT | |
| dc.subject.keywords | MECHANISMS | |
| dc.subject.keywords | BREAKDOWN | |
| dc.subject.keywords | VOLTAGE | |
| dc.subject.keywords | STATES | |
| dc.subject.keywords | MODEL | |
| dc.title | Role of the GaN-on-Si Epi-Stack on ?R-ON Caused by Back-Gating Stress | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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