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Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
Publication:
Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Mercha, Abdelkarim
;
Pantisano, Luigi
;
Claeys, Cor
;
Young, E.
Journal
IEEE Trans. Electron Devices
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1925
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1925
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations