Publication:
Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
Date
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Mercha, Abdelkarim | |
| dc.contributor.author | Pantisano, Luigi | |
| dc.contributor.author | Claeys, Cor | |
| dc.contributor.author | Young, E. | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.imecauthor | Mercha, Abdelkarim | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.contributor.orcidimec | Mercha, Abdelkarim::0000-0002-2174-6958 | |
| dc.date.accessioned | 2021-10-15T16:17:18Z | |
| dc.date.available | 2021-10-15T16:17:18Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9606 | |
| dc.source.beginpage | 780 | |
| dc.source.endpage | 784 | |
| dc.source.issue | 5 | |
| dc.source.journal | IEEE Trans. Electron Devices | |
| dc.source.volume | 51 | |
| dc.title | Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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