Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge

Publication:

2011

Journal article

Author(s)

;

;

;

;

;

Peter, Storck

;

Buschhardt, Thomas

;

Vorderwestner, Martin

Journal of Crystal Growth

1884 since deposited on 2021-10-19

Acq. date: 2026-02-24