Publication:

Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge

Date

2011
Journal article
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dc.contributor.authorLoo, Roger
dc.contributor.authorSouriau, Laurent
dc.contributor.authorOng, Patrick
dc.contributor.authorKenis, Karine
dc.contributor.authorRip, Jens
dc.contributor.authorPeter, Storck
dc.contributor.authorBuschhardt, Thomas
dc.contributor.authorVorderwestner, Martin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorRip, Jens
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.date.accessioned2021-10-19T15:43:28Z
dc.date.available2021-10-19T15:43:28Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19333
dc.source.beginpage15
dc.source.endpage21
dc.source.issue1
dc.source.journalJournal of Crystal Growth
dc.source.volume324
dc.title

Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge

dc.typeJournal article
dspace.entity.typePublication
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