Publication:

Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method

Date

2025-03-17
Journal article
https://doi.org/10.1016/j.mee.2025.112334
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dc.contributor.authorFavia, Paola
dc.contributor.authorEneman, Geert
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorMartinez Alanis, Gerardo Tadeo
dc.contributor.authorRichard, Olivier
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPuttarame Gowda, Pallavi
dc.contributor.authorSeidel, Felix
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGrieten, Eva
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorMartinez Alanis, Gerardo Tadeo
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorPuttarame Gowda, Pallavi
dc.contributor.imecauthorSeidel, Felix
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGrieten, Eva
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecMartinez Alanis, Gerardo Tadeo::0000-0001-5036-0491
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPuttarame Gowda, Pallavi::0009-0005-2886-5895
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecGrieten, Eva::0000-0001-6328-7633
dc.date.accessioned2025-03-18T10:38:35Z
dc.date.available2025-03-18T10:38:35Z
dc.date.issued2025-03-17
dc.identifier.doihttps://doi.org/10.1016/j.mee.2025.112334
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45416
dc.source.beginpage112334
dc.source.endpage112
dc.source.issueNA
dc.source.journalMicroelectronic Engineering
dc.source.numberofpages112340
dc.source.volume299
dc.subject.disciplineMaterials science
dc.subject.keywordsTransmission electron microscopy (TEM); Strain mapping; Bessel beam electron diffraction; (BBED); Semiconductor devices; Silicon
dc.title

Unveiling strain in future generation transistor technology by Bessel beam electron diffraction method

dc.typeJournal article
dspace.entity.typePublication
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