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Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

Date

2019
Proceedings Paper
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dc.contributor.authorMoens, P.
dc.contributor.authorConstant, A.
dc.contributor.authorStockman, Arno
dc.contributor.authorFranchi, J.
dc.contributor.authorAllerstam, F.
dc.contributor.imecauthorStockman, Arno
dc.date.accessioned2021-10-27T14:05:52Z
dc.date.available2021-10-27T14:05:52Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33599
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8757560
dc.source.conference31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
dc.source.conferencedate19/05/2019
dc.source.conferencelocationShanghai China
dc.title

Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

dc.typeProceedings paper
dspace.entity.typePublication
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