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Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio

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dc.contributor.authorKulkarni, S.R.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorGalloway, K.F.
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T08:04:28Z
dc.date.available2021-10-17T08:04:28Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13967
dc.source.beginpage59
dc.source.conference8th European Workshop on Radiation Effects on Components and Systems - RADECS
dc.source.conferencedate10/09/2008
dc.source.conferencelocationJyväskylä Finland
dc.source.endpage63
dc.title

Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio

dc.typeProceedings paper
dspace.entity.typePublication
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