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Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
Publication:
Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Young, C.D.
;
Kerber, Andreas
;
Hou, T.H.
;
Cartier, Eduard
;
Brown, G.A.
;
Bersuker, G.
;
Kim, Y.
;
Lim, C.
;
Gutt, J.
;
Lysaght, P.
;
Bennett, J.
;
Lee, C.H.
;
Gopalan, S.
;
Gardner, M.
;
Zeitzoff, P.
;
Groeseneken, Guido
;
Murto, R.W.
;
Huff, H.R.
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1911
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1911
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations