Publication:

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Date

2004
Proceedings Paper
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dc.contributor.authorYoung, C.D.
dc.contributor.authorKerber, Andreas
dc.contributor.authorHou, T.H.
dc.contributor.authorCartier, Eduard
dc.contributor.authorBrown, G.A.
dc.contributor.authorBersuker, G.
dc.contributor.authorKim, Y.
dc.contributor.authorLim, C.
dc.contributor.authorGutt, J.
dc.contributor.authorLysaght, P.
dc.contributor.authorBennett, J.
dc.contributor.authorLee, C.H.
dc.contributor.authorGopalan, S.
dc.contributor.authorGardner, M.
dc.contributor.authorZeitzoff, P.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMurto, R.W.
dc.contributor.authorHuff, H.R.
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-15T18:11:27Z
dc.date.available2021-10-15T18:11:27Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9966
dc.source.beginpage347
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
dc.source.endpage359
dc.title

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

dc.typeProceedings paper
dspace.entity.typePublication
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