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Impact of dopants and silicon structure dimensions on {113}- defect formation during 2 MeV electron irradiation in an UHVEM

Date

2015
Journal article
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorAnada, S.
dc.contributor.authorNagase, T.
dc.contributor.authorYasuda, H.
dc.contributor.authorSchulze, Andreas
dc.contributor.authorBender, Hugo
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.date.accessioned2021-10-23T00:25:45Z
dc.date.available2021-10-23T00:25:45Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26106
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201400222/abstract
dc.source.beginpage1160
dc.source.endpage1165
dc.source.issue8
dc.source.journalPhysica Status Solidi C
dc.source.volume12
dc.title

Impact of dopants and silicon structure dimensions on {113}- defect formation during 2 MeV electron irradiation in an UHVEM

dc.typeJournal article
dspace.entity.typePublication
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