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Investigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and below

Date

2020-08
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPorret, Clément
dc.contributor.authorVohra, Anurag
dc.contributor.authorAyyad, Mustafa
dc.contributor.authorDouhard, Bastien
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorAyyad, Mustafa
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-28T22:35:13Z
dc.date.available2021-10-28T22:35:13Z
dc.date.issued2020-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35277
dc.identifier.urlhttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/143409
dc.source.beginpageG03-1735
dc.source.conferenceECS-2020 Prime Meeting; Symposium G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu USA
dc.title

Investigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and below

dc.typeMeeting abstract
dspace.entity.typePublication
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