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Articles
High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts
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High responsivity low-voltage 28Gb/s Ge p-i-n photodetector with silicon contacts
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Date
2015
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Hongtao
;
Verheyen, Peter
;
De Heyn, Peter
;
Lepage, Guy
;
De Coster, Jeroen
;
Absil, Philippe
;
Roelkens, Gunther
;
Van Campenhout, Joris
Journal
Journal of Lightwave Technology
Abstract
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1912
since deposited on 2021-10-22
2
last month
Acq. date: 2025-12-11
Citations