Publication:

MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectrics

Date

2017
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorZhang, Haodong
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorGaur, Abhinav
dc.contributor.authorConard, Thierry
dc.contributor.authorBender, Hugo
dc.contributor.authorLin, Dennis
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorHeyns, Marc
dc.contributor.authorRadu, Iuliana
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDelabie, Annelies
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.accessioned2021-10-24T19:54:59Z
dc.date.available2021-10-24T19:54:59Z
dc.date.issued2017
dc.identifier.issn0897-4756
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30014
dc.identifier.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.chemmater.7b01695
dc.source.beginpage6772
dc.source.endpage6780
dc.source.issue16
dc.source.journalChemistry of Materials
dc.source.volume29
dc.title

MoS2 functionalization with a Sub-nm thin SiO2 layer for atomic layer deposition of high-k dielectrics

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles