Publication:

Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner

Date

2020
Meeting abstract
Simple item page Full metadata Statistics
 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-7493-9681
cris.virtual.orcid0000-0002-8877-9850
cris.virtual.orcid0000-0003-2869-1651
cris.virtual.orcid0009-0003-2798-8290
cris.virtual.orcid0009-0001-7264-8231
cris.virtual.orcid0000-0003-3630-7285
cris.virtual.orcid0000-0002-8473-7258
cris.virtual.orcid0000-0002-3663-7439
cris.virtual.orcid0000-0001-8220-870X
cris.virtual.orcid0000-0001-9971-6954
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-1057-8140
cris.virtual.orcid0000-0002-5956-6485
cris.virtualsource.departmentd910b17c-774d-4036-8b49-51680f68b5e2
cris.virtualsource.department62920b7f-7796-4f0c-9330-257cf5e12846
cris.virtualsource.department5a95d7fb-60a3-41d3-9237-399e069d07d9
cris.virtualsource.departmenteae1f049-dca8-4893-a728-59eed45a2414
cris.virtualsource.departmentddefe677-ac9d-4f1b-bc40-9266175d0987
cris.virtualsource.departmenteb733e42-f551-4192-b0fb-795d0fe0d073
cris.virtualsource.department89d5c66e-5be3-4956-bcad-46eec658f3d4
cris.virtualsource.department907474d7-b288-4cda-ae3b-769a18d335fa
cris.virtualsource.department97013840-4a92-4f62-9440-b4729dd38e27
cris.virtualsource.departmentce03ac04-c546-4df1-a775-1c68e533233e
cris.virtualsource.departmentb58ab4f7-a16d-401e-9377-c6fe2ba7faac
cris.virtualsource.departmentee7e6e4c-3b87-41b4-9995-a519c69c638e
cris.virtualsource.departmentc1bbf7c6-fe00-4d3e-9b77-5ac76d18c50a
cris.virtualsource.orcidd910b17c-774d-4036-8b49-51680f68b5e2
cris.virtualsource.orcid62920b7f-7796-4f0c-9330-257cf5e12846
cris.virtualsource.orcid5a95d7fb-60a3-41d3-9237-399e069d07d9
cris.virtualsource.orcideae1f049-dca8-4893-a728-59eed45a2414
cris.virtualsource.orcidddefe677-ac9d-4f1b-bc40-9266175d0987
cris.virtualsource.orcideb733e42-f551-4192-b0fb-795d0fe0d073
cris.virtualsource.orcid89d5c66e-5be3-4956-bcad-46eec658f3d4
cris.virtualsource.orcid907474d7-b288-4cda-ae3b-769a18d335fa
cris.virtualsource.orcid97013840-4a92-4f62-9440-b4729dd38e27
cris.virtualsource.orcidce03ac04-c546-4df1-a775-1c68e533233e
cris.virtualsource.orcidb58ab4f7-a16d-401e-9377-c6fe2ba7faac
cris.virtualsource.orcidee7e6e4c-3b87-41b4-9995-a519c69c638e
cris.virtualsource.orcidc1bbf7c6-fe00-4d3e-9b77-5ac76d18c50a
dc.contributor.authorRamesh, Siva
dc.contributor.authorAjaykumar, Arjun
dc.contributor.authorBastos, Joao
dc.contributor.authorBreuil, Laurent
dc.contributor.authorArreghini, Antonio
dc.contributor.authorNyns, Laura
dc.contributor.authorSoulie, Jean-Philippe
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchleicher, Filip
dc.contributor.authorJossart, Nico
dc.contributor.authorStiers, Jimmy
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorAjaykumar, Arjun
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorSoulie, Jean-Philippe
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchleicher, Filip
dc.contributor.imecauthorJossart, Nico
dc.contributor.imecauthorStiers, Jimmy
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecSoulie, Jean-Philippe::0000-0002-5956-6485
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecSchleicher, Filip::0000-0003-3630-7285
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.date.accessioned2021-10-29T02:44:34Z
dc.date.available2021-10-29T02:44:34Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35801
dc.identifier.urlhttps://www.ieeesisc.org/programs/2020_SISC_technical_program.pdf
dc.source.beginpage13.4
dc.source.conference51st IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate16/12/2020
dc.source.conferencelocationVirtual Conference NA
dc.title

Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner

dc.typeMeeting abstract
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions