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Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures
Publication:
Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures
Date
2010
Proceedings Paper
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21832.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rodrigues, M.
;
Galeti, M.
;
Collaert, Nadine
;
Simoen, Eddy
;
Claeys, Cor
;
Martino, J.A.
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1871
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1871
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations