Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures

dc.contributor.author	Rodrigues, M.
dc.contributor.author	Galeti, M.
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Martino, J.A.
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-18T20:51:47Z
dc.date.available	2021-10-18T20:51:47Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17887
dc.source.beginpage	53
dc.source.conference	9th International Workshop on Low Temperature Electronics - WOLTE
dc.source.conferencedate	21/06/2010
dc.source.conferencelocation	Guaruja Brazil
dc.source.endpage	55
dc.title	Analog application of SOI nFinFETs with different TiN gate electrode thickness operating at cryogenic temperatures
dc.type	Proceedings paper
dspace.entity.type	Publication
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