Publication:

Controlling the Wet-Etch Directionality in Nanostructured Silicon

Date

2022
Journal article
https://doi.org/10.1021/acsaelm.2c00824
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dc.contributor.authorAabdin, Zainul
dc.contributor.authorGhosh, Tanmay
dc.contributor.authorPacco, Antoine
dc.contributor.authorRaj, Sanoj
dc.contributor.authorDo, Hue Thi Bich
dc.contributor.authorSaidov, Khakimjon
dc.contributor.authorWeei, Tjiu Weng
dc.contributor.authorAnand, Utkarsh
dc.contributor.authorKral, Petr
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorBosman, Michel
dc.contributor.authorMirsaidov, Utkur
dc.contributor.imecauthorPacco, Antoine
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecPacco, Antoine::0000-0001-6330-5053
dc.contributor.orcidimecHolsteyns, Frank::0009-0002-2123-452X
dc.date.accessioned2023-04-27T14:08:25Z
dc.date.available2022-12-03T03:08:21Z
dc.date.available2023-04-27T14:08:25Z
dc.date.issued2022
dc.description.wosFundingTextThis work was supported by Singapore's National Research Foundation (NRF) under the Competitive Research Programme (NRFCRP16-2015-05) .
dc.identifier.doi10.1021/acsaelm.2c00824
dc.identifier.issn2637-6113
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40815
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage5191
dc.source.endpage5198
dc.source.issue11
dc.source.journalACS APPLIED ELECTRONIC MATERIALS
dc.source.numberofpages8
dc.source.volume4
dc.subject.keywordsSINGLE-CRYSTAL SILICON
dc.subject.keywordsGENERAL FORCE-FIELD
dc.subject.keywordsIN-SITU
dc.subject.keywordsKOH
dc.subject.keywordsFABRICATION
dc.subject.keywordsACTIVATION
dc.subject.keywordsENERGY
dc.subject.keywordsCELL
dc.title

Controlling the Wet-Etch Directionality in Nanostructured Silicon

dc.typeJournal article
dspace.entity.typePublication
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