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The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography
Publication:
The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography
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Date
2024-DEC
Journal article
https://doi.org/10.1016/j.ultramic.2024.114034
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Guerguis, Bavley
;
Cuduvally, Ramya
;
Morris, Richard
;
Arcuri, Gabriel
;
Langelier, Brian
;
Bassim, Nabil
Journal
ULTRAMICROSCOPY
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24
since deposited on 2024-09-13
10
last month
3
last week
Acq. date: 2026-02-26
Views
401
since deposited on 2024-09-13
2
last month
Acq. date: 2026-02-26
Citations