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The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-0902-7088
cris.virtualsource.department109cf3f2-1b04-4cf0-afe4-cb09c5f6c4ee
cris.virtualsource.orcid109cf3f2-1b04-4cf0-afe4-cb09c5f6c4ee
dc.contributor.authorGuerguis, Bavley
dc.contributor.authorCuduvally, Ramya
dc.contributor.authorMorris, Richard
dc.contributor.authorArcuri, Gabriel
dc.contributor.authorLangelier, Brian
dc.contributor.authorBassim, Nabil
dc.contributor.imecauthorMorris, Richard J. H.
dc.date.accessioned2024-09-13T17:13:48Z
dc.date.available2024-09-13T17:13:48Z
dc.date.issued2024-DEC
dc.description.wosFundingTextThe authors would like to thank the Natural Sciences and Engineering Research Council of Canada (NSERC) for supporting this work under the Discovery Grant program. All microscopy work presented here was carried out at the Canadian Center for Electron Microscopy (CCEM) , a national facility supported by McMaster University, NSERC, and the Canada Foundation for Innovation (CFI) . B.G. is grateful to Frederick Meisenkothen and Joe Bennett of the NIST for fruitful discussions.
dc.identifier.doi10.1016/j.ultramic.2024.114034
dc.identifier.issn0304-3991
dc.identifier.pmidMEDLINE:39205346
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44479
dc.publisherELSEVIER
dc.source.beginpage114034
dc.source.issueDecember
dc.source.journalULTRAMICROSCOPY
dc.source.numberofpages13
dc.source.volume266
dc.subject.keywordsDIRECTIONAL WALK
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsEVENTS
dc.title

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

dc.typeJournal article
dspace.entity.typePublication
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